View IRF5210SPBF_709773.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 97049A
IRF5210SPBF IRF5210LPbF
HEXFET(R) Power MOSFET
l l l l l l l l
Advanced Process Technology Ultra Low On-Resistance 150C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free
D
VDSS = -100V RDS(on) = 60m
G S
ID = -38A
D
Description Features of this design are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
D
G
D
S G D
S
D2Pak IRF5210SPBF G D
TO-262 IRF5210LPbF S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage
Max.
-38 -24 -140 3.1 170 1.3 20 120 -23 0.017 -7.4 -55 to + 150 300 (1.6mm from case )
Units
A
c
W W/C V mJ A mJ V/ns C
c Peak Diode Recovery dv/dt e
Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Single Pulse Avalanche Energy Avalanche Current
c
d
Thermal Resistance
RJC RJA
Parameter
Junction-to-Case Junction-to-Ambient (PCB Mount, steady state)
Typ.
Max.
0.75 40
Units
C/W
g
--- ---
www.irf.com
1
05/22/06
IRF5210S/LPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS VDSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
-100 --- --- -2.0 9.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- -0.11 --- --- --- --- --- --- --- 150 22 81 14 63 72 55 4.5 7.5 2780 800 430 --- --- 60 -4.0 --- -50 -250 100 -100 230 33 120 --- --- --- --- --- --- --- --- --- pF
Conditions
V VGS = 0V, ID = -250A V/C Reference to 25C, ID = -1mA m VGS = 10V, ID = -38A V VDS = VGS, ID = -250A S VDS = -50V, ID = -23A A VDS = -100V, VGS = 0V VDS = -80V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V nC ID = -23A VDS = -80V VGS = -10V ns VDD = -50V ID = -23A RG = 2.4 VGS = -10V nH Between lead,
f
f f
6mm (0.25in.) from package and center of die contact VGS = 0V VDS = -25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 170 1180 -38 A -140 -1.6 260 1770 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = -23A, VGS = 0V TJ = 25C, IF = -23A, VDD = -25V di/dt = -100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
f
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11) Starting TJ = 25C, L = 0.46mH RG = 25, IAS = -23A. (See Figure 12) ISD -23A, di/dt -650A/s, VDD V(BR)DSS, TJ 150C.
Pulse width 300s; duty cycle 2%. When mounted on 1" square PCB (FR-4or G-10
Material). For recommended footprint and soldering techniques refer to application note #AN-994.
2
www.irf.com
IRF5210S/LPbF
1000
TOP VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V
1000
TOP VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V
-ID, Drain-to-Source Current (A)
100
BOTTOM
-ID, Drain-to-Source Current (A)
100
BOTTOM
10 -4.5V 1
10 -4.5V 1
60s PULSE WIDTH
Tj = 25C 0.1 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V)
60s PULSE WIDTH
Tj = 150C 0.1 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -38A
-I D, Drain-to-Source Current (A)
100
T J = 25C T J = 150C
VGS = -10V
1.5
10
1.0
1 VDS = -50V 60s PULSE WIDTH 0.1 2 4 6 8 10 12 14
0.5 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C)
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
www.irf.com
3
IRF5210S/LPbF
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED
12.0 ID= -23A
-V GS, Gate-to-Source Voltage (V)
C rss = C gd
10.0 8.0 6.0 4.0 2.0 0.0
C oss = C ds + C gd
VDS= -80V VDS= -50V VDS= -20V
C, Capacitance(pF)
10000 Ciss 1000 Coss Crss
100 1 10 -VDS, Drain-to-Source Voltage (V) 100
0
25
50
75
100
125
150
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100 T J = 150C 10 T J = 25C
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
100
10 Tc = 25C Tj = 150C Single Pulse 1 1 10
100sec 1msec 10msec 100 1000
1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -VSD, Source-to-Drain Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRF5210S/LPbF
VDS
40 35
-I D, Drain Current (A)
RD
V GS RG
D.U.T.
+
30 25 20 15 10 5 0 25 50 75 100 125 150
90% VDS
td(on) tr t d(off) tf
-10V
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
VGS 10%
T C , Case Temperature (C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
1 D = 0.50
Thermal Response ( Z thJC )
0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
J J 1 R1 R1 2 R2 R2 R3 R3 C 1 2 3 3
Ri (C/W)
(sec)
0.128309 0.000069 0.377663 0.001772 0.244513 0.010024
0.01
Ci= i/Ri Ci= i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1
0.001 1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
-
VDD
5
IRF5210S/LPbF
VDS
L
500
EAS , Single Pulse Avalanche Energy (mJ)
RG
D.U.T
IAS
-20V
DRIVER
0.01
VDD A
450 400 350 300 250 200 150 100 50 0 25 50 75
tp
ID -8.7A -14A BOTTOM -23A TOP
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
100
125
150
Starting T J , Junction Temperature (C)
tp V(BR)DSS
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
-10V
QGS VG
QG QGD
50K 12V .2F .3F
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
www.irf.com
+
D.U.T.
-
VDS
IRF5210S/LPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG V GS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ -V DD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[
VGS=10V
] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
[
VDD
]
Body Diode
Forward Drop
Ripple 5%
[
ISD
]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 15. For P-Channel HEXFETS
www.irf.com
7
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
IRF5210S/LPbF
D2Pak (TO-263AB) Part Marking Information
UCDTADTA6IADSA$"TAXDUC GPUA8P9@A'!# 6TT@H7G@9APIAXXA!A! DIAUC@A6TT@H7GAGDI@AAGA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S A$"T 96U@A8P9@ @6SAA2A! X@@FA! GDI@AG
25
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@
8
Q6SUAIVH7@S A$"T 96U@A8P9@ QA2A9@TDBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G @6SAA2A! X@@FA! 6A2A6TT@H7GATDU@A8P9@
www.irf.com
IRF5210S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
@Y6HQG@) UCDTADTA6IADSG" "G GPUA8P9@A &'( 6TT@H7G@9APIAXXA (A ((& DIAUC@A6TT@H7GAGDI@AA8A DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
96U@A8P9@ @6SA&A2A ((& X@@FA ( GDI@A8
25
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
96U@A8P9@ QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UAPQUDPI6G @6SA&A2A ((& X@@FA ( 6A2A6TT@H7GATDU@A8P9@
www.irf.com
9
IRF5210S/LPbF
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 05/06
10
www.irf.com

▲Up To Search▲

Price & Availability of IRF5210SPBF

	To Download IRF5210SPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .